BUK6510-75C NXP Semiconductors, BUK6510-75C Datasheet - Page 10

• Manufacturer Part Number: BUK6510-75C
• Description: MOSFET,N CH,75V,54A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK6510-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 8.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 15. Normalized drain-source on-state resistance
Fig 17. Gate charge waveform definitions
a
2.5
1.5
0.5
3
2
1
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
All information provided in this document is subject to legal disclaimers.
003aaa508
003aad804
T
j
(°C)
Rev. 02 — 13 December 2010
180
Fig 16. Gate-source voltage as a function of gate
Fig 18. Gate-source voltage as a function of gate
V
(V)
GS
V
10
(V)
10
GS
8
6
4
2
0
8
6
4
2
0
charge; typical values
charge; typical values
0
0
V
20
DS
10
= 6V
15V
14V
40
BUK6510-75C
N-channel TrenchMOS FET
20
60
V
DS
24V
= 60V
30
© NXP B.V. 2010. All rights reserved.
80
Q
003aaf019
003aae414
Q
G
G
(nC)
(nC)
100
40
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