BUK6510-75C NXP Semiconductors, BUK6510-75C Datasheet - Page 8

• Manufacturer Part Number: BUK6510-75C
• Description: MOSFET,N CH,75V,54A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK6510-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 8.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 7.
Fig 9.
V
(S)
g
GS(th)
(V)
120
100
fs
80
60
40
20
0
4
3
2
1
0
-60
drain current; typical values
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
0
20
0
40
max
min
typ
60
60
120
80
All information provided in this document is subject to legal disclaimers.
003aad805
003aae411
T
I
j
D
(°C)
(A)
Rev. 02 — 13 December 2010
100
180
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(A)
D
I
10
D
10
10
10
10
10
120
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
0
0
1
1
min
2
T
j
BUK6510-75C
= 175 °C
N-channel TrenchMOS FET
2
typ
3
max
3
T
© NXP B.V. 2010. All rights reserved.
j
4
= 25 °C
003aae410
003aad806
V
V
GS
GS
(V)
(V)
4
5
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