BUK6607-75C NXP Semiconductors, BUK6607-75C Datasheet - Page 9

• Manufacturer Part Number: BUK6607-75C
• Description: MOSFET,N CH,75V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6607-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
V
V
V
GS
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
C
C
C
oss
rss
iss
Q
GS1
I
1
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
003aaa508
003aae552
(V)
Rev. 2 — 17 November 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
160
120
S
10
80
40
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25°C; I
= 0 V
V
T
0.4
DS
j
= 175 °C
D
= 14 V
= 25 A
50
BUK6607-75C
N-channel TrenchMOS FET
0.8
T
j
100
= 25 °C
V
1.2
DS
Q
© NXP B.V. 2010. All rights reserved.
G
= 60 V
V
003aae551
003aae554
(nC)
SD
(V)
150
1.6
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