BUK6607-55C,118 NXP Semiconductors, BUK6607-55C,118 Datasheet

BUK6607-55C,118

Manufacturer Part Number

BUK6607-55C,118

Description

MOSFET N-CH TRENCH D2PACK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK6607-55C118.pdf (14 pages)

Specifications of BUK6607-55C,118

Input Capacitance (ciss) @ Vds

5160pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6.5 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

82nC @ 10V

Power - Max

158W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

7 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

158 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor

(FET) in a plastic package using advanced TrenchMOS technology. This product has

been designed and qualified to the appropriate AEC Q101 standard for use in high

performance automotive applications.

Table 1.

Symbol

Static characteristics

tot

DSon

BUK6607-55C

N-channel TrenchMOS logic and standard level FET

Rev. 1 — 14 October 2010

AEC Q101 compliant

Suitable for standard and logic level

gate drives

12 V and 24 V automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

see

≥ 25 °C; T

= 25 °C; see

Figure 1

= 25 °C; see

= 10 V; T

= 10 V; I

≤ 175 °C

= 25 A;

Figure 11

= 25 °C;

Figure 2

Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

[1]

Min

Product data sheet

Typ

5.5

Max Unit

100

158

6.5

mΩ

Related parts for BUK6607-55C,118

BUK6607-55C,118 Summary of contents

Page 1

... BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 — 14 October 2010 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Min ≤ sup = Figure 13; Graphic symbol G mbb076 Typ Max Unit - 128 ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 Figure 420 - 158 -55 175 -55 175 ...

Page 4

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6607-55C Product data sheet N-channel TrenchMOS logic and standard level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Min Typ Max - - 0.95 003aae317 δ ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... Output characteristics: drain current as a function of drain-source voltage; typical values 003aaf007 ( (V) GS Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Min Typ - 0 003aae892 V ( 4.5 GS 0 300 μs = 25°C; t ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aaf008 V ( 6.0 10.0 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C 4 V GS(th) (V) 3 max typ 2 min junction temperature 2.5 ...

Page 9

... N-channel TrenchMOS logic and standard level FET V ( 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae897 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C 25° charge; typical values 100 I S ...

Page 10

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6607-55C v.1 20101014 BUK6607-55C Product data sheet N-channel TrenchMOS logic and standard level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 ...

Page 12

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 14 October 2010 BUK6607-55C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK6607-55C ...

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