BUK663R5-30C NXP Semiconductors, BUK663R5-30C Datasheet - Page 8

• Manufacturer Part Number: BUK663R5-30C
• Description: MOSFET,N CH,30V,100A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK663R5-30C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
(V)
DS on
15
12
4
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
V
GS
(V) = 3.6
25
0
max
min
typ
3.8
60
50
4.0
120
75
All information provided in this document is subject to legal disclaimers.
003aae310
I
003aad805
D
T
(A)
j
(°C)
4.5
5.0
6.0
Rev. 02 — 16 November 2010
10
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
1
BUK663R5-30C
min
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
T
GS
j
( ° C)
03aa27
(V)
180
4
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