NTE5499 NTE ELECTRONICS, NTE5499 Datasheet
NTE5499
Manufacturer Part Number
NTE5499
Description
SCR THYRISTOR, 7.6A, 800V, TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5499.pdf
(2 pages)
Specifications of NTE5499
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max, Igt
10mA
Current It Av
7.6A
On State Rms Current It(rms)
12A
Peak Non Rep Surge Current Itsm 50hz
120A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (T
Peak Repetitive Off−State Voltage (T
RMS On−State Current (All Conduction Angles, T
Average On−State Current (Half Cycle, 180° Conduction Angle, T
Non−Repetitive On−State Current (Half Cycle, 60Hz), I
Non−Repetitive On−State Current (Half Cycle, 50Hz), I
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
Peak Gate Current (10μs Max), I
Peak Gate Dissipation (10μs Max), P
Average Gate Dissipation (20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Electrical Characteristics: (T
Off−State Leakage Current
On−State Voltage
On−State Threshold Voltage
On−State Slope Resistance
Gate−Trigger Current
Gate−Trigger Voltage
NTE5498
NTE5499
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
Symbol
V
I
I
DRM
V
RRM
T(TO)
I
V
r
GT
stg
A
GT
T
T
GM
= +25°C unless otherwise specified)
,
A
NTE5498 & NTE5499
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
J
V
I
T
T
V
V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
J
J
12 Amp, TO220
DRM
D
D
= −40° to +125°C, R
= 24A, T
= +125°C
= +125°C
= 7V
= 7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
J
thJC
+ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
RRM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
= +25°C
, R
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +85°C), I
GK
2
= 1kΩ
TSM
TSM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1kΩ), V
T(RMS)
T
T
J
J
= +125°C
= +25°C
C
= +85°C), I
. . . . . . . . . . . . . . . . . . . . .
L
DRM
. . . . . . . . . . . . . . .
, V
Min Typ Max
−
−
−
−
−
5
−
RRM
T(AV)
−
−
−
−
−
−
−
−40° to +125°C
−40° to +125°C
. . . . . . . .
1.5
5.0
1.8
1.0
2.0
36
10
+250°C
60K/W
72A
3K/W
Unit
400V
800V
132A
120A
mΩ
mA
mA
7.6A
10W
μA
12A
V
V
V
1W
4A
2
s
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NTE5499 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T Peak Repetitive Off−State Voltage (T NTE5498 ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn−Off Time .147 (3.75) Dia Max .070 (1.78) Max = +25°C unless otherwise specified) A Symbol ...