BLF645 NXP Semiconductors, BLF645 Datasheet - Page 4
BLF645
Manufacturer Part Number
BLF645
Description
LDMOS,RF,100W,HF-1300MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF645112.pdf
(13 pages)
Specifications of BLF645
Transistor Type
RF MOSFET
Drain Source Voltage Vds
65V
Continuous Drain Current Id
32A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-540A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF645
Manufacturer:
MICROCHIP
Quantity:
450
Company:
Part Number:
BLF645
Manufacturer:
NXP
Quantity:
81 000
Company:
Part Number:
BLF645,112
Manufacturer:
EMCT
Quantity:
1 400
NXP Semiconductors
8. Test information
BLF645_1
Product data sheet
Fig 1.
(dB)
G
p
20
19
18
17
16
15
14
13
0
V
f = 1300 MHz.
Power gain and drain efficiency as function of
load power; typical values
DS
= 32 V; I
8.1.1 1-Tone CW
8.1 RF performance
40
Dq
G
η
D
p
= 900 mA (for total device);
The following figures are measured in a class-AB production test circuit.
80
120
P
001aal361
L
(W)
Rev. 01 — 27 January 2010
160
70
60
50
40
30
20
10
0
(%)
η
D
Fig 2.
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
p
20
19
18
17
16
15
14
13
12
0
V
Power gain as a function of load power;
typical values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 200 mA (for total device).
= 400 mA (for total device).
= 600 mA (for total device).
= 900 mA (for total device).
= 1200 mA (for total device).
= 1400 mA (for total device).
= 1800 mA (for total device).
= 32 V; f = 1300 MHz.
Broadband power LDMOS transistor
40
(7)
(6)
(5)
(4)
(3)
(2)
(1)
80
120
© NXP B.V. 2010. All rights reserved.
P
BLF645
001aal362
L
(W)
160
4 of 13