BLF645 NXP Semiconductors, BLF645 Datasheet - Page 6

• Manufacturer Part Number: BLF645
• Description: LDMOS,RF,100W,HF-1300MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF645

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 32A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-540A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF645_1
Product data sheet
Fig 4.
(dB)
G
p
20
19
18
17
16
15
14
0
V
f = 1300 MHz; carrier spacing = 100 kHz.
Power gain and drain efficiency as function of
peak envelope load power; typical values
DS
= 32 V; I
8.1.2 2-Tone CW
40
Dq
G
η
D
p
= 900 mA (for total device);
80
120
P
L(PEP)
001aal364
(W)
Rev. 01 — 27 January 2010
160
60
50
40
30
20
10
0
(%)
η
D
Fig 5.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
−10
−20
−30
−40
−50
−60
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 200 mA (for total device).
= 400 mA (for total device).
= 600 mA (for total device).
= 900 mA (for total device).
= 1200 mA (for total device).
= 1400 mA (for total device).
= 1800 mA (for total device).
= 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
40
Broadband power LDMOS transistor
80
120
(1)
(2)
(3)
(4)
(5)
(6)
(7)
© NXP B.V. 2010. All rights reserved.
160
P
L(PEP)
BLF645
001aal365
(W)
200
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