SIR414DP-T1-GE3 Vishay, SIR414DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR414DP-T1-GE3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR414DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 20V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0028 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 102 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 5400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR414DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
0.0030
0.0025
0.0020
0.0015
10
70
56
42
28
14
8
6
4
2
0
0
0.0
0
0
I
D
= 20 A
10
15
On-Resistance vs. Drain Current
V
0.5
V
DS
Q
GS
Output Characteristics
g
- Drain-to-Source Voltage (V)
20
V
30
- Total Gate Charge (nC)
I
= 10 V thru 3 V
D
DS
- Drain Current (A)
Gate Charge
= 20 V
V
V
GS
GS
1.0
30
45
= 4.5 V
= 10 V
V
DS
40
60
= 24 V
1.5
50
75
New Product
2.0
60
90
6000
4500
3000
1500
2.0
1.7
1.4
1.1
0.8
0.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
I
C
D
rss
On-Resistance vs. Junction Temperature
= 20 A
- 25
0.6
6
V
V
DS
GS
Transfer Characteristics
T
0
C
J
oss
T
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
iss
= 125 °C
25
Capacitance
1.2
T
12
C
= 25 °C
50
Vishay Siliconix
1.8
18
V
75
GS
SiR414DP
= 10 V
www.vishay.com
V
100
GS
T
2.4
C
24
= 4.5 V
125
150
3.0
30
3