SIR414DP-T1-GE3 Vishay, SIR414DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR414DP-T1-GE3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR414DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 20V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0028 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 102 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 5400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR414DP-T1-GE3TR

SiR414DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
2.1
1.7
1.3
0.9
0.5
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
T
0.8
J
= 25 °C
0.01
100
0.1
Limited by R
10
100
1
0.01
I
D
= 250 µA
1.0
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
T
GS
A
= 25 °C
New Product
DS(on)
> minimum V
V
1.2
150
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.009
0.006
0.003
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 ms
1 s
10 s
DC
100 µs
1 ms
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S09-0319-Rev. A, 02-Mar-09
Document Number: 64727
6
T
T
1
J
J
= 25 °C
= 125 °C
8
10
1
0