CQY80N Vishay, CQY80N Datasheet

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CQY80N

Manufacturer Part Number
CQY80N
Description
OPTOCOUPLER, TRANSISTOR, 5000VRMS
Manufacturer
Vishay
Datasheet

Specifications of CQY80N

No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
32V
Opto Case Style
DIP
No. Of Pins
6
Mounting Type
Through Hole
Isolation Voltage
5kV
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor With Base
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
32 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
90 % (Typ)
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CQY80N
Quantity:
6 850
Part Number:
CQY80NG
Manufacturer:
Vishay Semiconductors
Quantity:
135
Part Number:
CQY80NG
Manufacturer:
VISHAY
Quantity:
15 388
Part Number:
CQY80NGIH
Manufacturer:
TEMIC
Quantity:
5 510
Part Number:
CQY80NGIH
Quantity:
5 510
DESCRIPTION
The CQY80N(G) series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
6 pin plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60065, BS EN 60950
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
Note
G = leadform 10.16 mm; G is not marked on the body.
Document Number: 83533
Rev. 1.9, 13-Oct-09
ORDER INFORMATION
PART
CQY80N
CQY80NG
17201_4
Optocoupler, Phototransistor Output, with Base Connection
For technical questions, contact:
18537_5
A (+)
B
6
1
C (-)
C
5
2
D E
V
NC
4
3
E
optocoupleranswers@vishay.com
FEATURES
• Isolation materials according to UL94-VO
• Pollution
• Special construction: therefore, extra low
• Low temperature coefficient of CTR
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated
• Isolation test voltage (partial discharge test voltage)
• Rated
• Rated
• Creepage current resistance according to VDE 0303/
• Thickness through insulation ≥ 0.75 mm
• Compliant to RoHS directive 2002/95/EC and in
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
IEC 60664)
coupling capacity of typical 0.3 pF, high common
mode rejection
V
V
V
V
IEC 60112 comparative tracking index: CTI = 275
accordance to WEEE 2002/96/EC
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)
IOTM
pd
IOWM
IORM
= 1.6 kV
= 6 kV peak
= 600 V
= 600 V
isolation
impulse
recurring
degree
RMS
RMS
CTR > 50 %, DIP-6
CTR > 50 %, DIP-6
(848 V peak)
CQY80N, CQY80NG
2
Vishay Semiconductors
REMARKS
voltage
voltage
(DIN/VDE
peak
(transient
(RMS
voltage
0110/resp.
includes
www.vishay.com
overvoltage)
(repetitive)
DC)
263

Related parts for CQY80N

CQY80N Summary of contents

Page 1

... Optocoupler, Phototransistor Output, with Base Connection 18537_5 17201_4 DESCRIPTION The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode pin plastic dual inline package. AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI 41003 60065 60950 • DIN EN 60747-5-5 (VDE 0884) • ...

Page 2

... CQY80N, CQY80NG Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Power dissipation Junction temperature Forward surge current OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) ...

Page 3

... V, T amb R IO (construction test only 13930 Fig Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC 60747 optocoupleranswers@vishay.com CQY80N, CQY80NG Vishay Semiconductors MIN. TYP. MAX. 130 265 6 150 MIN. TYP. MAX. 1 ...

Page 4

... CQY80N, CQY80NG Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time + mA; Adjusted through Ω 0. µs p Channel I Channel II 50 Ω 100 Ω 14943 Fig Test Circuit, Non-Saturated Operation + 0. µs p Channel I ...

Page 5

... Fig Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83533 For technical questions, contact: Rev. 1.9, 13-Oct-09 Optocoupler, Phototransistor Output, with Base Connection 80 120 95 11026 Fig Collector Dark Current vs. Ambient Temperature 1.6 2.0 Fig Collector Base Current vs. Forward Current optocoupleranswers@vishay.com CQY80N, CQY80NG Vishay Semiconductors 10 000 1000 100 ...

Page 6

... CQY80N, CQY80NG Vishay Semiconductors 100 0.1 0 Collector Emitter Voltage (V) 95 11054 CE Fig Collector Current vs. Collector Emitter Voltage 1.0 0.8 0.6 CTR = 50 % used 0.4 0 used Collector Current (mA) 95 11055 C Fig Collector Emitter Saturation Voltage vs. Collector Current 1000 800 600 400 200 0 0.01 ...

Page 7

... CQY80N V YWW 24 21764-28 optocoupleranswers@vishay.com CQY80N, CQY80NG Vishay Semiconductors 7.62 typ. 6.5 ± 0.3 7.62 to 9.5 typ. 7.62 typ. 6.5 ± 0.3 10.16 (typ.) www.vishay.com 269 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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