CQY80N Vishay, CQY80N Datasheet - Page 2

• Manufacturer Part Number: CQY80N
• Description: OPTOCOUPLER, TRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of CQY80N

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 90 % (Typ)
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CQY80N, CQY80NG
Vishay Semiconductors
Notes
(1)
(2)
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
264
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Power dissipation
Junction temperature
Forward surge current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
CURRENT TRANSFER RATIO
PARAMETER
I
C
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices.
/I
amb
F
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact:
V
TEST CONDITION
CE
Optocoupler, Phototransistor Output,
= 5 V, I
V
I
V
F
V
CE
TEST CONDITION
CE
= 10 mA, I
R
= 5 V, I
= 0 V, f = 1 MHz
= 20 V, I
I
R
I
E
F
I
f = 1 MHz
F
(1)
C
L
= 100 µA
= 10 mA
= 50 mA
E = 0
= 1 mA
= 100 Ω
with Base Connection
F
2 mm from case, t ≤ 10 s
C
= 10 mA,
F
t
= 1 mA
p
TEST CONDITION
= 0 A,
/T = 0.5, t
t
t = 1 min
p
≤ 10 µs
SYMBOL
[e-mail]
p
≤ 10 ms
CTR
SYMBOL
V
V
V
I
CEO
CEsat
V
C
C
CEO
ECO
f
c
F
k
j
MIN.
50
MIN.
32
7
SYMBOL
V
V
P
P
V
T
I
T
T
I
P
V
FSM
CEO
ECO
T
I
CM
T
amb
I
diss
diss
ISO
stg
sld
F
C
tot
R
j
j
TYP.
90
TYP.
1.25
110
0.3
50
10
- 55 to + 100
- 55 to + 125
VALUE
5000
125
100
125
250
260
1.5
60
70
32
50
70
5
7
Document Number: 83533
MAX.
MAX.
200
1.6
0.3
Rev. 1.9, 13-Oct-09
UNIT
V
mW
mW
mW
mA
mA
mA
UNIT
°C
°C
°C
°C
°C
RMS
UNIT
V
A
V
V
kHz
nA
%
pF
pF
V
V
V
V