GP2W0110YP0F Sharp Microelectronics, GP2W0110YP0F Datasheet - Page 3

• Manufacturer Part Number: GP2W0110YP0F
• Description: Infrared Transceivers IrDA 115 kbit/s 20 cm Side View
• Manufacturer: Sharp Microelectronics

Specifications of GP2W0110YP0F

• Wavelength: 870 nm
• Continual Data Transmission: 115.2 Kbit/s
• Transmission Distance: 20 cm
• Radiant Intensity: 25 mW/sr
• Maximum Rise Time: 40 ns, 60 ns
• Maximum Fall Time: 40 ns, 60 ns
• Led Supply Voltage: 2 V to 6 V
• Operating Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6. Electrical and Optical Specifications
Specifications hold over the Recommended Operating Conditions, unless otherwise noted. All typical values are
at 25
*
SHARP Electronic Components
Rev. 1.2
I
Maximum Reception Distance
OL
High Level Output Voltage
Low Level Output Voltage
Viewing Angle
Low Level Pulse Width
Current Consumption
Rise Time
Fall Time
Latency
Receiver wakeup time
Radiant Intensity
Peak Emission Wavelength
Peak LED Current
Shutdown input current
TXD high level input current
TXD low level input current
ELECTRONIC COMPONENTS
: Current goes into IC while RXD is ON state (Low Level Output)
o
C and V
, March 7, 2002
Parameter
DD
= 2.0 to 3.6V, unless otherwise noted. Refer to specifications for complete details and conditions.
90%
50%
10%
VOH
Criteria for
Pulse Position
GP2W0110YP Infrared Transceiver Module Output Waveform
Symbo
V
V
Iihtxd
tsdw
Iiltxd
I
OHRXD
OLRXD
t
I
Iisd
2
DD-S
I
λp
tw
LED
TAT
DD
I
L
tr
tf
l
E
tj
V
> 0.2
-0.02
Min.
850
tf
DD
1.0
3.6
30
4
-
-
-
-
-
-
-
-
-
-
-0.
IrDA Low Power Infrared Transceiver
Typ.
0.01
870
90
25
32
0
-
-
-
-
-
-
-
-
-
-
-
VOL
tw
+0.02
Max.
0.45
120
300
200
900
3.0
2.0
0.4
0.4
0.2
25
50
-
-
-
-
degrees
mW/sr
µsec
µsec
µsec
µsec
µsec
Unit
mA
nm
µA
µA
µA
µA
µA
m
V
V
tr
V
OPEN, Topr = 25º C, V
V
4, 5, 6
2θ1/2<15
I
I
BR = 115.2 kb/s, 2θ1/2<15
With no input signal, SD = 0V,
Output Terminal OPEN
Shutdown Mode, no input signal,
see below
see below
2∅1/2<15
Topr = 25º C, V
IHSD
LEDA
OH
OL
= 20 µA
= 20 µA
90%
50%
10%
= V
= 3.3V, V
DD
o
o
, I
– 0.5V, Output Terminal
Conditions
, BR = 115.2 kbit/s,
E
= 3.6 mW/sr
IHTXD
DD
= 3.3V.
= 2.8V, notes
DD
= 3.3V.
o
3