SI4390DY-T1-E3 Vishay, SI4390DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4390DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: WFET®r

Specifications of SI4390DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72150
S09-0221-Rev. E, 09-Feb-09
0.030
0.024
0.018
0.012
0.006
0.000
0.1
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 12.5 A
0.2
= 15 V
On-Resistance vs. Drain Current
10
3
V
T
Q
SD
J
g
= 150 °C
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
V
I
D
GS
V
Gate Charge
- Drain Current (A)
GS
20
6
= 4.5 V
= 10 V
0.6
30
9
T
J
0.8
= 25 °C
12
40
1.0
1.2
15
50
0.040
0.032
0.024
0.016
0.008
0.000
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 12.5 A
= 10 V
2
6
V
V
DS
GS
0
T
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
Capacitance
2 5
12
4
I
D
5 0
Vishay Siliconix
= 12.5 A
18
6
7 5
Si4390DY
C
www.vishay.com
iss
100
24
8
125
150
10
30
3