SI4390DY-T1-E3 Vishay, SI4390DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4390DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: WFET®r

Specifications of SI4390DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4390DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 25
- 4
0.05
Duty Cycle = 0.5
0.2
0.1
0.02
0
Threshold Voltage
T
J
2 5
- Temperature (°C)
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 0
I
Single Pulse
D
0.01
100
0.1
= 250 µA
Limited by
10
1
R
7 5
0.1
DS(on)*
* V
Safe Operating Area, Junction-to-Case
100
10
GS
- 2
> minimum V
V
125
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
150
= 25 °C
Square Wave Pulse Duration (s)
GS
10
at which R
- 1
10
DS(on)
is specified
200
160
120
80
40
1
1 ms
10 ms
100 ms
1 s
10 s
DC
0.001
0
100
0.01
1 0
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
S09-0221-Rev. E, 09-Feb-09
= P
0.1
t
2
Document Number: 72150
DM
Z
th J A
th J A
100
t
t
1
2
(t )
= 68 °C/W
1
600
10