SFH 3010-Z OSRAM Opto Semiconductors Inc, SFH 3010-Z Datasheet - Page 3

• Manufacturer Part Number: SFH 3010-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: -r

Specifications of SFH 3010-Z

• Maximum Power Dissipation: 130 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 7 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 7 us
• Package / Case: SMT
• Voltage - Collector Emitter Breakdown (max): 15V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 50nA
• Wavelength: 860nm
• Viewing Angle: 160°
• Power - Max: 130mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A6458

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessungen der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität
Capacitance
V
Dunkelstrom
Dark current
V
Fotostrom
Photocurrent
E
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektrr-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
2008-10-17
C
C
CE
CE
e
e
= 10% von
= 10% of
= 1 mA,
= 10μA
= 0.5 mW/cm
= 0.5 mW/cm
= 5 V,
= 20 V,
f
V
S
= 1 MHz,
E
CC
max
T
S
A
= 0
max
= 5 V,
= 25 °C, λ = 950 nm)
2
2
,
, λ = 950 nm
V
CE
E
R
= 5 V
L
= 0
= 1 kΩ
3
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
I
t
V
r
CEO
PCE
S max
,
CEsat
CE
t
×
×
f
B
W
Wert
Value
860
420 … 1100
0.04
0.35 × 0.35
± 80
1.3
2 (≤ 50)
>25.0
7
140
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
μA
μs
mV
SFH 3010
2