SFH 3010-Z OSRAM Opto Semiconductors Inc, SFH 3010-Z Datasheet - Page 5

• Manufacturer Part Number: SFH 3010-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: -r

Specifications of SFH 3010-Z

• Maximum Power Dissipation: 130 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 7 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 7 us
• Package / Case: SMT
• Voltage - Collector Emitter Breakdown (max): 15V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 50nA
• Wavelength: 860nm
• Viewing Angle: 160°
• Power - Max: 130mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A6458

Rel. Spectral Sensitivity,
S
Photocurrent
V
Photocurrent
I
2008-10-17
Ι
PCE
I
rel
S
Ι
PCE
CE
PCE
PCE
rel
100
25
=
90
80
70
60
50
40
30
20
10
= 5 V, normalized to 25 °C
450
350
300
250
200
150
100
=
%
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
µA
0
50
f
400 500 600 700 800 900
0
0
-25
f
(λ), axial direction
0
(
V
CE
5
),
0
1 mW/cm
0.5 mW/cm
0.25 mW/cm
0.1 mW/cm
E
I
10
e
PCE
= Parameter
25
2
15
=
2
2
2
f
50
(
T
20
A
),
OHF00593
OHF00612
75
25
nm 1100
λ
V
OHF01524
T
CE
A
V
C
30
100
Dark Current
I
Collector-Emitter Capacitance
C
CEO
Ι
C
CE
CEO
CE
10
10
10
10
nA
=
3.0
2.5
2.0
1.5
1.0
0.5
pF
=
-1
-2
1
0
0
10
0
f
f
(
-2
(
V
V
CE
CE
),
),
10
f
E = 0
-1
10
= 1 MHz
5
10
0
20
10
1
OHF00592
OHF00383
V
V
CE
V
CE
V
10
30
2
Dark Current
I
Total Power Dissipation
P
CEO
Ι
P
tot
CEO
tot
10
10
10
mW
140
120
100
10
nA
10
=
80
60
40
20
=
1
0
-1
0
3
2
f
0
0
f
(
T
(
T
A
A
)
),
20
20
V
CE
40
40
= 20 V,
60
SFH 3010
60
E = 0
80 C 100
80
OHF00613
T
OHF00380
T
A
A
˚C
100