SI7302DN-T1-E3 Vishay, SI7302DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7302DN-T1-E3
• Description: MOSFET N-CH 220V PWRPAK 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7302DN-T1-E3

• Input Capacitance (ciss) @ Vds: 645pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 220V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 52W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73306
S-83051-Rev. D, 29-Dec-08
10
8
6
4
2
0
25
Package Limited
50
D
is based on T
T
C
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
60
50
40
30
20
10
0
25
V
I
D
GS
= 2.3 A
50
= 4.5 V
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si7302DN
www.vishay.com
125
150
5