SI7302DN-T1-E3 Vishay, SI7302DN-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI7302DN-T1-E3
• Description: MOSFET N-CH 220V PWRPAK 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7302DN-T1-E3

• Input Capacitance (ciss) @ Vds: 645pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 220V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 52W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7302DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73306.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
0.02
-
3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
A
t
1
= P
t
S-83051-Rev. D, 29-Dec-08
2
DM
Document Number: 73306
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
600
1