IXTA130N10T-TRL IXYS, IXTA130N10T-TRL Datasheet

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IXTA130N10T-TRL

Manufacturer Part Number
IXTA130N10T-TRL
Description
MOSFET N-CH 100V 130A TO263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA130N10T-TRL

Input Capacitance (ciss) @ Vds
5080pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.1 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Power - Max
360W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
Weight
© 2008 IXYS CORPORATION, All rights reserved
Symbol
(T
BV
V
I
I
R
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
V
J
J
C
C
C
C
C
GS
GS
GS
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTA130N10T
IXTP130N10T
Characteristic Values
Min.
100
-55 ... +175
-55 ... +175
2.5
Maximum Ratings
1.13 / 10
± 30
Typ.
100
100
130
350
500
360
175
300
260
3.0
2.5
75
65
± 200
Max.
250
Nm/lb.in.
4.5
9.1
5
μA
mJ
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS(on)
DSS
G
G
D
=
=
S
≤ ≤ ≤ ≤ ≤
S
D
TAB = Drain
100V
130A
= Drain
9.1mΩ Ω Ω Ω Ω
(TAB)
DS99649B(07/08)
(TAB)

Related parts for IXTA130N10T-TRL

IXTA130N10T-TRL Summary of contents

Page 1

... D = ± 20V GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA130N10T IXTP130N10T Maximum Ratings 100 = 1MΩ 100 GS ± 30 130 75 350 JM 65 500 360 -55 ... +175 175 -55 ... +175 300 260 1. 3.0 2.5 Characteristic Values Min. Typ. ...

Page 2

... R 0.46 1.0 V TO-220 (IXTP) Outline Pins Gate 3 - Source 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTA130N10T IXTP130N10T 2 - Drain Inches Max. Min. Max. 4.83 .160 .190 2.79 .080 .110 0.99 .020 .039 1.40 .045 .055 0.74 .018 ...

Page 3

... Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 140 External Lead Current Limit for TO-263 (7-Lead) 120 100 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 -50 - Degrees Centigrade C IXTA130N10T IXTP130N10T 65A Value 65A D 100 125 150 175 100 125 150 175 ...

Page 4

... C oss 0.10 C rss 0. Fig. 8. Transconductance 40º 25º 150º 100 120 I - Amperes D Fig. 10. Gate Charge 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTA130N10T IXTP130N10T 140 160 180 200 220 100 110 1 10 ...

Page 5

... Switching Times vs. Junction Temperature d(off Ω 10V 50V 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 25A < d(on 125º 10V 50V 25A 50A Ohms G IXTA130N10T IXTP130N10T 105 115 125 170 < 50A D 150 130 110 IXYS REF: T_130N10T (4V) 7-29-08-A ...

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