IXTA130N10T-TRL IXYS, IXTA130N10T-TRL Datasheet - Page 4

• Manufacturer Part Number: IXTA130N10T-TRL
• Description: MOSFET N-CH 100V 130A TO263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA130N10T-TRL

• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Power - Max: 360W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
270
240
210
180
150
120
270
240
210
180
150
120
100
90
60
30
90
60
30
10
0
0
3.5
0.4
0
f = 1 MHz
4.0
0.5
5
Fig. 9. Forward Voltage Drop of
4.5
0.6
T
10
J
Fig. 7. Input Admittance
Fig. 11. Capacitance
= 150ºC
5.0
0.7
Intrinsic Diode
15
V
V
V
GS
DS
SD
5.5
0.8
- Volts
- Volts
- Volts
20
6.0
0.9
C oss
C iss
C rss
25
T
J
6.5
1.0
= 25ºC
T
J
= - 40ºC
30
150ºC
1.1
25ºC
7.0
35
1.2
7.5
40
1.3
8.0
1.00
0.10
0.01
130
120
110
100
10
90
80
70
60
50
40
30
20
10
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
T
J
V
I
I
10
20
D
G
= - 40ºC
DS
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
= 50V
0.001
20
40
Fig. 8. Transconductance
30
25ºC
60
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
150ºC
40
80
- NanoCoulombs
0.01
I
D
Impedance
- Amperes
100
50
120
60
0.1
140
70
IXTA130N10T
IXTP130N10T
160
80
1
180
90
100
200
10
110
220