NSBC114EPDXV6T5 ON Semiconductor, NSBC114EPDXV6T5 Datasheet - Page 5
NSBC114EPDXV6T5
Manufacturer Part Number
NSBC114EPDXV6T5
Description
Digital Transistors 100mA Complementary
Manufacturer
ON Semiconductor
Datasheet
1.NSBC124XPDXV6T5.pdf
(14 pages)
Specifications of NSBC114EPDXV6T5
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SOT-563-6
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
357 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBC114EPDXV6T5G
Manufacturer:
ON
Quantity:
30 000
0.001
4
3
2
1
0
0.01
0
0.1
1
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 2. V
20
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
0.1
10
1
0
30
Figure 6. Input Voltage versus Output Current
V
versus I
O
= 0.2 V
T
A
40
10
= -25°C
f = 1 MHz
I
T
C
E
40
A
= 0 V
= 25°C
I
C
75°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
50
T
A
= -25°C
5
0.001
1000
75°C
30
0.01
100
100
0.1
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 3. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= -25°C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
-25°C
= 5 V
9
25°C
100
10