NSBC114EPDXV6T5 ON Semiconductor, NSBC114EPDXV6T5 Datasheet - Page 9

• Manufacturer Part Number: NSBC114EPDXV6T5
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of NSBC114EPDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.8
0.6
0.4
0.2
0.01
0.1
1
0
10
1
0
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
I
C
/I
B
10
Figure 24. Output Capacitance
= 10
V
Figure 22. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
100
0.1
10
1
T
0
Figure 26. Input Voltage versus Output Current
30
A
= -25°C
versus I
V
O
= 0.2 V
10
f = 1 MHz
I
T
C
E
40
40
A
= 0 V
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
9
T
0.001
1000
A
30
0.01
100
100
= -25°C
0.1
10
10
1
1
0
Figure 25. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 23. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25°C
4
10
T
A
= -25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
-25°C
100
10