AM29F160DB-90EI Spansion Inc., AM29F160DB-90EI Datasheet - Page 10

• Manufacturer Part Number: AM29F160DB-90EI
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29F160DB-90EI

• Memory Size: 16Mbit
• Memory Configuration: 2M X 8 / 1M X 16
• Ic Interface Type: Parallel
• Access Time: 90ns
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Termination Type: SMD
• Memory Voltage, Vcc: 5V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register it-
self does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
Legend:
L = Logic Low = V
Notes:
1. Addresses are A19:A0 in word mode (BYTE# = V
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
3. The 16 Kbyte boot sector is protected when WP# = V
4. In CMOS mode, WP# must be at V
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and control-
led by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are ac-
tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
8
Read
Write
Standby
Output Disable
Reset
Sector Protect
(Note 2)
Sector Unprotect
(Note 2)
Temporary Sector
Unprotect
Protection/Unprotection” section.
Operation
IL
, H = Logic High = V
V
0.5 V
CE#
CC
X
X
L
L
L
L
L
±
OE# WE#
H
X
H
X
H
H
X
L
Table 1. Am29F160D Device Bus Operations
IL
H
H
X
X
X
L
L
L
CC
. CE# is the power
IH
±0.5 V or left floating.
, V
(Note 3)
(Note 4)
(Note 3)
ID
WP#
X
X
X
X
X
= 12.0 ± 0.5 V, X = Don’t Care, A
IH
RESET#
), A19:A-1 in byte mode (BYTE# = V
V
0.5 V
Am29F160D
V
V
V
CC
IL
H
H
H
L
ID
ID
ID
.
±
Sector Address,
Sector Address,
A6 = H, A1 = H,
A6 = L, A1 = H,
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe
each of these operations in further detail.
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should re-
main at V
The internal state machine is set for reading array
data upon device power-up, or after a hardware reset.
This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
Addresses
(Note 1)
A0 = L
A0 = L
A
A
A
X
X
X
IN
IN
IN
IH
.
IN
= Address In, D
High-Z
High-Z
High-Z
DQ0–
D
DQ7
D
D
D
D
OUT
IN
IN
IN
IN
IL
).
BYTE#
High-Z
High-Z
High-Z
D
= V
D
D
IN
OUT
X
X
IN
IN
IH
= Data In, D
DQ8–DQ14 = High-Z,
DQ8–DQ15
DQ15 = A-1
BYTE#
High-Z
High-Z
High-Z
High-Z
OUT
= V
X
X
IL
= Data Out