DG470EY-T1-E3 Vishay, DG470EY-T1-E3 Datasheet - Page 2

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DG470EY-T1-E3

Manufacturer Part Number
DG470EY-T1-E3
Description
HIGH VOLTAGE SINGLE & DUAL SPDT AS
Manufacturer
Vishay
Datasheet

Specifications of DG470EY-T1-E3

Function
Switch
Circuit
1 x SPDT
On-state Resistance
8 Ohm
Current - Supply
3µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Number Of Switches
1
Switch Configuration
SPDT
On Resistance (max)
11 Ohms
On Time (max)
265 ns
Off Time (max)
163 ns
Supply Voltage (max)
36 V
Supply Voltage (min)
12 V
Maximum Power Dissipation
400 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
0.003 mA, - 0.0004 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG470EY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG470EY-T1-E3
Manufacturer:
VISHAY
Quantity:
1 200
Part Number:
DG470EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
DG469, DG470
Vishay Siliconix
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
Notes:
a. Signals on S
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 5.0 mW/°C above 70 °C.
www.vishay.com
2
ORDERING INFORMATION
Temp. Range
DG469, DG470
ABSOLUTE MAXIMUM RATINGS T
Parameter
V+ to V-
GND to V-
Digital Inputs
Continuous Current (NO, NC, or COM)
Current (Any terminal except NO, NC, or COM)
Peak Current, (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
Power Dissipation (Package)
SPECIFICATIONS for Dual Supplies
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Channel On
Leakage Current
Digital Control
Input Current, V
Input Current, V
Input Capacitance
- 40 °C to 125 °C
a
X
, V
, D
IN
IN
S
X
, V
e
, or IN
Low
High
D
e
a
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b
R
V
Symbol
FLATNESS
ANALOG
ΔR
I
I
I
R
S(off)
D(off)
D(on)
C
I
I
ON
IH
IL
IN
ON
I
I
S
S
8-Pin Narrow SOIC
= 50 mA, V
= 50 mA, V
V
8-Pin MSOP
I
S
V
V
8-Pin MSOP
8-Pin Narrow SOIC
V+ = 15 V, V- = - 15 V
D
Package
IN
IN
= 50 mA, V
Unless Specified
V
= ± 14 V, V
V
A
Test Conditions
IN
Under Test = 0.8 V
Under Test = 2.4 V
S
= 25 °C, unless otherwise noted
= V
= 2.4 V, 0.8 V
f = 1 MHz
D
D
D
= - 10 V to + 10 V
= - 5 V, 0 V, + 5 V
= ± 14 V
c
D
S
= ± 10 V
= ± 14 V
d
a
Temp.
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
or 30 mA, whichever occurs first
Typ.
± 0.1
± 0.1
± 0.2
0.12
0.05
0.05
3.6
0.4
3.7
(V-) - 2 to (V+) + 2
c
- 65 to 150
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
Limit
- 0.5
- 0.5
- 0.5
DG469EQ-T1-E3
DG470EQ-T1-E3
- 15
- 20
- 20
- 20
120
200
320
400
DG469EY-T1-E3
DG470EY-T1-E3
44
25
30
- 1
- 1
Part Number
d
Max.
0.4
0.9
0.5
0.9
0.5
0.5
0.5
15
20
20
20
6
8
1
1
S09-1053-Rev. D, 08-Jun-09
d
Document Number: 71470
Min.
- 0.5
- 2.5
- 0.5
- 2.5
- 0.5
- 15
- 5
- 1
- 1
d
Max.
0.4
0.5
0.5
0.8
0.5
2.5
0.5
2.5
0.5
15
6
7
5
1
1
d
Unit
mW
mA
°C
V
Unit
nA
µA
pF
Ω
V

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