DG470EY-T1-E3 Vishay, DG470EY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG470EY-T1-E3
• Description: HIGH VOLTAGE SINGLE & DUAL SPDT AS
• Manufacturer: Vishay

Specifications of DG470EY-T1-E3

• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 8 Ohm
• Current - Supply: 3µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Number Of Switches: 1
• Switch Configuration: SPDT
• On Resistance (max): 11 Ohms
• On Time (max): 265 ns
• Off Time (max): 163 ns
• Supply Voltage (max): 36 V
• Supply Voltage (min): 12 V
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.003 mA, - 0.0004 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG470EY-T1-E3TR

Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
SPECIFICATIONS for Dual Supplies
Parameter
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
SPECIFICATIONS for Dual Supplies
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
V
Symbol
ANALOG
ΔR
I
R
t
t
GND
OFF
Symbol
ON
t
I+
Q
I-
ON
D
C
C
X
C
OIRR
ON
I
t
t
GND
OFF
TALK
S(off)
D(off)
D(on)
ON
t
Q
I+
I-
D
I
S
V
= 50 mA, V
g
R
R
V
I
= 0 V, R
V+ = 4.5 V, V- = - 4.5 V
S
L
L
g
V+ = 16.5 V, V- = - 16.5 V
Unless Specified
V
= 50 mA, V
R
R
Test Conditions
= 300 Ω, C
= 300 Ω, C
= 0 V, R
V+ = 15 V, V- = - 15 V
V
IN
R
L
L
Unless Specified
IN
V
L
Test Conditions
= 300 Ω, C
= 300 Ω, C
= 2.4 V, 0.8 V
IN
V
V
= 50 Ω, C
= 0 or 4.5 V
V
g
V
S
S
IN
= 2.4 V, 0.8 V
V
f = 1 MHz
f = 1 MHz
D
= 0 Ω, C
S
= 2 V
= 2 V
S
g
= 0 or 5 V
= - 2 V to + 2 V
= ± 10 V
= 0 Ω, C
= 10 V
D
L
L
= 35 pF
= 35 pF
= ± 2 V
L
L
L
L
= 35 pF
= 35 pF
= 5 pF
a
= 1 nF
L
= 1 nF
a
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
b
b
Typ.
- 0.4
245
145
0.6
3.0
3.0
15
58
Typ.
8
- 0.4
- 3.0
- 57
- 63
129
125
3.0
80
15
58
37
85
c
c
- 45 °C to 125 °C - 40 °C to 85 °C
Min.
- 40 °C to 125 °C - 40 °C to 85 °C
- 4.5
- 0.5
- 4.5
Min.
- 6
- 7
- 0.5
- 4.5
- 6
- 7
d
d
Max.
265
340
163
200
Max.
4.5
0.7
0.9
11
16
166
200
108
135
6
7
DG469, DG470
6
7
d
d
Vishay Siliconix
Min.
- 4.5
- 0.5
- 4.5
Min.
- 0.5
- 4.5
- 6
- 7
- 6
- 7
d
d
www.vishay.com
Max.
Max.
310
163
185
166
185
108
120
4.5
0.7
0.8
11
15
65
6
7
6
7
d
d
Unit
Unit
pC
dB
µA
pC
pF
µA
ns
ns
V
Ω
3