LM3559TLX/NOPB National Semiconductor, LM3559TLX/NOPB Datasheet - Page 4

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LM3559TLX/NOPB

Manufacturer Part Number
LM3559TLX/NOPB
Description
LM3559
Manufacturer
National Semiconductor
Series
-r
Datasheet

Specifications of LM3559TLX/NOPB

Constant Current
Yes
Constant Voltage
-
Topology
High Side, PWM, Step-Up (Boost)
Number Of Outputs
2
Internal Driver
Yes
Type - Primary
Flash/Torch
Type - Secondary
White LED
Frequency
1.8MHz ~ 2.2MHz
Voltage - Supply
2.5 V ~ 5.5 V
Voltage - Output
-
Mounting Type
Surface Mount
Package / Case
16-UFBGA
Operating Temperature
-40°C ~ 85°C
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Current Source Specifications
I
V
V
Step-Up DC/DC Converter Specifications
R
R
LED
OUT
OVP
PMOS
NMOS
Absolute Maximum Ratings
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Limits in standard typeface are for T
(-40°C
V
V
V
V
Continuous Power Dissipation
(Note
Junction Temperature (T
Storage Temperature Range
Maximum Lead Temperature
(Soldering)
ESD Rating
(Human Body Model)
IN
SCL
TX2
SW
- V
Symbol
, V
, V
, V
LED1/2
3)
OUT
LED1
SDA
T
A
, V
, V
HWEN
+85ºC). Unless otherwise specified, V
LED2
, V
Current Source
Accuracy
Current Source
Regulation
Voltage
Output Over-
Voltage Protection
Trip
PMOS Switch On-
Resistance
NMOS Switch On-
Resistance
, V
LEDI/NTC
STROBE
Parameter
Point(Note
J-MAX
, V
)
TX1
,
9)
A
= +25°C. Limits in boldface type apply over the full operating ambient temperature range
I
3.0V
V
I
V
ON Threshold
OFF Threshold
I
I
LED1
LED
PMOS
NMOS
OUT
OUT
Internally Limited
-65°C to +150°C
= 4.5V
= 1.8A (I
+I
+0.3V) w/ 6.0V
(Note
= 4.5V
V
= 1A
= 1A
LED2,
IN
lesser of (V
-0.3V to +6V
(Note
-0.3V to the
-0.3V to 6V
4.2V,
2,
(Note
+150°C
LED1
IN
1,
Note
Conditions
900 mA
Flash
Current
Setting, per
current
source
28.125 mA
Torch
Current ,
per current
source
= 3.6V, V
max
Note
2kV
+ I
4)
IN
7)
LED2
)
4
HWEN
-40°C
T
-40°C
Operating Ratings
Thermal Properties
ESD Caution Note:
National Semiconductor recommends that all integrated cir-
cuits be handled with appropriate ESD precautions. Failure to
observe proper ESD handling techniques can result in dam-
age to the device.
V
Junction Temperature (T
Ambient Temperature (T
(Note
Thermal Junction-to-Ambient
Resistance (θ
(Note
A
= V
+85°C
+85°C
IN
= +25°C
IN
.
5)
6)
T
T
A
A
JA
4.925
-10%
)
-7%
-4%
Min
A
J
)
)
1800
56.2
4.88
Typ
270
80
80
5
(Note
1,
+10%
5.075
Note
+7%
+4%
Max
-40°C to +125°C
-40°C to +85°C
2.5V to 5.5V
2)
50.4°C/W
Units
mA
mV
mΩ
mΩ
V

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