UBA2024BP/N1,112 NXP Semiconductors, UBA2024BP/N1,112 Datasheet - Page 10

• Manufacturer Part Number: UBA2024BP/N1,112
• Description: IC DRIVER HALF BRIDGE 8-DIP
• Manufacturer: NXP Semiconductors
• Type: CFL/TL Driverr

Specifications of UBA2024BP/N1,112

• Frequency: 40.05kHz ~ 42.68kHz
• Current - Supply: 5mA
• Voltage - Supply: 11.4 V ~ 13.3 V
• Operating Temperature: -40°C ~ 150°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Driver Type: CFL Drivers
• Operating Supply Voltage: 11.4 V to 13.3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Output Current: 2500 mA
• Minimum Operating Temperature: - 40 C
• Supply Current: 0 mA to 5 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
Table 5.
T
11. Electrostatic discharge
Table 6.
UBA2024
Product data sheet
Symbol
I
Internal oscillator
f
Δf
k
V
k
V
K
Sweep function
I
t
Model
ESDH (human body model)
ESDC (charged device model)
ESDM (machine model)
FS
osc
ch(sweep)
sweep
j
H
L
trip(osc)high
trip(osc)low
osc
= 25
osc
/f
osc
°
C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Characteristics
ElectroStatic Discharge (ESD) overview
Parameter
current on pin FS
oscillator frequency
relative oscillator frequency
variation
high-level trip point factor
high oscillator trip voltage
low-level trip point factor
low oscillator trip voltage
oscillator constant
sweep charge current
sweep time
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
V
V
operating; nominal; R
C
R
−20 °C ≤ T
V
V
R
V
C
HV
HV
SW
SW
trip(osc)high
trip(osc)low
SW
OSC
OSC
OSC
SW
UBA2024P, UBA2024T
UBA2024AP, UBA2024AT
UBA2024BP, UBA2024BT
= 310 V; V
= 160 V; V
= 0 V
= V
= 0 V
= 33 nF; V
Rev. 6.2 — 1 November 2010
= 220 pF; V
= 100 kΩ; C
= 100 kΩ; C
DD
Class
1C
C2
B
j
= k
= k
≤ +150 °C
L
H
FS
FS
× V
DD
× V
SW
= 12.2 V
= 12.2 V
OSC
OSC
= 12.2 V
DD
DD
= V
OSC
= 220 pF;
= 220 pF
DD
= 100 kΩ;
JEDEC classification criteria
pass at ESD pulse 1000 V
fail at ESD pulse 2000 V
pass at ESD pulse 200 V
fail at ESD pulse 500 V
pass at 200 V ≥ ESD pulse < 400 V
Half-bridge power IC for CFL lamps
Min
10
10
10
-
-
40.05
-
0.382
4.58
0.030
0.367
1.065
215
0.28
0.395
0.033
Typ
14
14
14
150
-
41.32
2
4.94
0.413
1.1
280
0.35
UBA2024
© NXP B.V. 2010. All rights reserved.
18
42.68
0.408
0.038
0.45
Max
18
18
-
60
-
5.29
0.483
1.35
345
10 of 17
Unit
μA
μA
μA
kHz
kHz
kHz
%
V
V
V
nA
s