BT151S-650L /T3 NXP Semiconductors, BT151S-650L /T3 Datasheet - Page 11

• Manufacturer Part Number: BT151S-650L /T3
• Description: SCRs TAPE 13-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650L /T3

• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650L,118

NXP Semiconductors
9. Revision history
Table 6.
BT151S_SER_L_R_5
Product data sheet
Document ID
BT151S_SER_L_R_5
Modifications:
BT151S_SERIES_4
(9397 750 13161)
BT151S_SERIES_3
BT151S_SERIES_2
BT151S_SERIES_1
Revision history
Release date
20061009
20040609
20020101
19990601
19970901
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•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Added type numbers BT151S-500L and BT151S-650L
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Rev. 05 — 9 October 2006
BT151S series L and R
Change notice
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-
-
-
-
Supersedes
BT151S_SERIES_4
BT151S_SERIES_3
BT151S_SERIES_2
BT151S_SERIES_1
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© NXP B.V. 2006. All rights reserved.
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