BT151S-650L /T3 NXP Semiconductors, BT151S-650L /T3 Datasheet - Page 4

• Manufacturer Part Number: BT151S-650L /T3
• Description: SCRs TAPE 13-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650L /T3

• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650L,118

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values
p
5
2
10 ms
mb
10
dl
103 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
Rev. 05 — 9 October 2006
10
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
BT151S series L and R
16
12
8
4
0
base temperature; maximum values
50
10
3
0
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2006. All rights reserved.
T
001aaa956
001aaa998
mb
I
TSM
( C)
t
10
150
Thyristors
2
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