BF1206F,115 NXP Semiconductors, BF1206F,115 Datasheet

RF MOSFET Small Signal Dual N-Channel 6V 30mA 180mW

BF1206F,115

Manufacturer Part Number
BF1206F,115
Description
RF MOSFET Small Signal Dual N-Channel 6V 30mA 180mW
Manufacturer
NXP Semiconductors
Datasheet
1.BF1206F115.pdf (20 pages)

Specifications of BF1206F,115

Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
6 V
Continuous Drain Current
30 mA
Power Dissipation
180 mW
Mounting Style
SMD/SMT
Package / Case
SOT-666
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Two low noise gain controlled amplifiers in a single package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Suited for 3 volt applications
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Product data sheet

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BF1206F,115 Summary of contents

Page 1

BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate ...

Page 2

Philips Semiconductors 1.4 Quick reference data Table 1: Per MOSFET unless otherwise specified. Symbol Parameter iss(G1) NF Xmod 2. Pinning information Table 2: Pin Ordering information ...

Page 3

Philips Semiconductors 4. Marking Table 4: Type number BF1206F 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET tot T stg T ...

Page 4

Philips Semiconductors 7. Static characteristics Table 7: Static characteristics Symbol Parameter Per MOSFET; unless otherwise specified V drain-source breakdown voltage (BR)DSS V gate1-source breakdown voltage (BR)G1-SS V gate2-source breakdown voltage (BR)G2-SS V forward source-gate1 voltage ...

Page 5

Philips Semiconductors Table 8: Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter Xmod cross modulation [1] Calculated from measured S-parameters. [2] Measured in Figure 32 test circuit. 8.1.1 Graphs for amplifier A ...

Page 6

Philips Semiconductors 100 0.5 1.0 ( 2.5 V. G2-S ( 2.0 V. G2-S ( 1.5 V. G2-S ( 1.0 V. G2-S V ...

Page 7

Philips Semiconductors (mA ( 100 ( 120 ( 150 ( 180 k ...

Page 8

Philips Semiconductors 0 gain reduction ( DS( amb Fig 10. Amplifier A: typical gain reduction as a function of ...

Page 9

Philips Semiconductors ( DS(A) G2 mA. D(A) Fig 13. Amplifier ...

Page 10

Philips Semiconductors 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifi DS(A) G2-S D(A) f (MHz Magnitude Angle (ratio) (deg) 50 0.9923 4.11 100 0.9930 ...

Page 11

Philips Semiconductors Table 11: Dynamic characteristics for amplifier B Common source amb G2-S Symbol Parameter Xmod cross modulation [1] Calculated from measured S-parameters. [2] Measured in Figure 32 test circuit. 8.3.1 Graphs for amplifier B ...

Page 12

Philips Semiconductors 100 0.5 1.0 ( 2.5 V. G2-S ( 2.0 V. G2-S ( 1.5 V. G2-S ( 1.0 V. G2-S V ...

Page 13

Philips Semiconductors (mA ( 120 ( 150 ( 180 ( 220 k ...

Page 14

Philips Semiconductors 0 gain reduction ( DS(A) G2(nom amb Fig 25. Amplifier B: typical gain reduction as a function of ...

Page 15

Philips Semiconductors ( DS(B) G2 mA. D(B) Fig 28. Amplifier ...

Page 16

Philips Semiconductors 8.3.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifi DS(B) G2-S D(B) f (MHz Magnitude Angle (ratio) (deg) 50 0.9939 3.12 100 0.9936 ...

Page 17

Philips Semiconductors 10. Package outline Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 ...

Page 18

Philips Semiconductors 11. Revision history Table 14: Revision history Document ID Release date BF1206F_1 20060130 BF1206F_1 Product data sheet Data sheet status Change notice product data sheet - Rev. 01 — 30 January 2006 BF1206F Dual N-channel dual gate MOSFET ...

Page 19

Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 20

Philips Semiconductors 17. Contents 1 Product profi 1.1 General description ...

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