BF1206F,115 NXP Semiconductors, BF1206F,115 Datasheet - Page 5

• Manufacturer Part Number: BF1206F,115
• Description: RF MOSFET Small Signal Dual N-Channel 6V 30mA 180mW
• Manufacturer: NXP Semiconductors

Specifications of BF1206F,115

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 6 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 180 mW
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
Table 8:
Common source; T
[1]
[2]
BF1206F_1
Product data sheet
Symbol
Xmod
Fig 2. Amplifier A: transfer characteristics; typical
Calculated from measured S-parameters.
Measured in
(mA)
(1) V
(2) V
(3) V
(4) V
I
D
15
10
5
0
V
values
0
G2-S
G2-S
G2-S
G2-S
DS(A)
Parameter
cross modulation
Dynamic characteristics for amplifier A
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
= 2.8 V; T
Figure 32
8.1.1 Graphs for amplifier A
0.4
amb
= 25 C; V
j
= 25 C.
test circuit.
0.8
(1)
G2-S
1.2
(2)
= 2.5 V; V
1.6
Conditions
input level for k = 1 %; f
f
V
unw
001aad896
(3)
(4)
G1 S
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
= 60 MHz
DS
(V)
Rev. 01 — 30 January 2006
2.0
= 2.8 V; I
…continued
D
= 4 mA.
Fig 3. Amplifier A: output characteristics; typical
w
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
= 50 MHz;
I
D
16
12
8
4
0
V
values
0
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G2-S
= 2.5 V; T
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.0 V.
= 0.9 V.
= 0.85 V.
= 0.8 V.
1
Dual N-channel dual gate MOSFET
(1)
j
= 25 C.
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[2]
2
Min
88
-
92
Typ
-
85
97
3
BF1206F
(2)
(3)
(4)
(5)
(6)
(7)
V
001aad897
DS
(V)
Max
-
-
-
4
Unit
dB V
dB V
dB V
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