PTFB211503EL V1 R250 Infineon Technologies, PTFB211503EL V1 R250 Datasheet

RF MOSFET Small Signal RFP-LDMOS 9

PTFB211503EL V1 R250

Manufacturer Part Number
PTFB211503EL V1 R250
Description
RF MOSFET Small Signal RFP-LDMOS 9
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB211503EL V1 R250

Configuration
Single
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
1.2 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-33288-6
Other names
FB211503ELV1R25NT
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
RF Characteristics
Two-carrier WCDMA Measurements
V
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
-20
-25
-30
-35
-40
-45
-50
-55
-60
31
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
V
DQ
DD
Two-carrier WCDMA 3GPP Drive-up
= 1.2 A, P
33
= 30 V, I
35
CASE
DQ
37
Output Power (dBm)
IMD Up
OUT
= 1.20 A, ƒ = 2170 MHz, 3GPP
BW 3.84 MHz
= 25°C unless otherwise indicated
39
= 32 W AVG, ƒ
Efficiency
41
43
IMD Low
(not subject to production test—verified by design/characterization in Infineon test fixture)
45
1
ACPR
47
= 2135 MHz, ƒ
49
40
35
30
25
20
15
10
5
0
1 of 14
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
Symbol
PTFB211503EL
H-33288-6
PTFB211503FL
H-34288-4/2
Features
ACPR
G
h
Broadband internal matching
Enhanced for use in DPD error correction systems
Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efficiency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P
- Efficiency = 55%
Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
Integrated ESD protection
Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
Pb-Free and RoHS compliant
ps
D
Min
1dB
Typ
–36
18
29
= 150 W
PTFB211503EL
PTFB211503FL
Rev. 04, 2011-03-07
Max
Unit
dBc
dB
%

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PTFB211503EL V1 R250 Summary of contents

Page 1

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features ...

Page 2

... Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (T = 70°C, 150 W CW) CASE Ordering Information Type and Version Package Outline PTFB211503EL V1 H-33288-6 PTFB211503EL V1 R250 H-33288-6 PTFB211503FL V2 H-34288-4/2 PTFB211503FL V2 R250 H-34288-4/2 Data Sheet Symbol Conditions Symbol µA V ...

Page 3

Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive- 1.20 A, 3GPP WCDMA PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive- ƒ = 2170 MHz, ƒ Gain 18 17 Efficiency Output Power, PEP (dBm) Two-tone ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Gain vs. Output Power ƒ = 2170 MHz ...

Page 6

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source G Z Source W Frequency MHz R 2200 2.06 –6.08 2170 2.17 –6.33 2140 2.30 –6.59 2110 2.43 –6.86 2080 2.58 –7.14 See next page for reference circuit information Data Sheet ...

Page 7

PTFB211503EL/FL_INPUT Confidential, Limited Internal Distribution Reference Circuit C801 S1 1000 Out C802 1000 pF R801 C803 R804 1000 pF 1200 Ohm 100 Ohm ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB211503EL or PTFB211503FL PCB 0.508 mm [.020"] thick, Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Input 0.095 λ, 54.17 W TL101, TL129 TL102 0.016 λ, 31.24 W 0.026 λ, ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Output TL201 (taper) 0.074 λ, 5. 39.51 W 0.010 λ, 4. 5.33 W TL202 (taper) TL203 TL204 TL205 TL206 0.000 ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB211503EF Find Gerber files for this test fixture on the Infineon Web site at RO4350, .030 R804 C801 C802 S3 R805 S1 R803 R101 C101 C103 ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Information Component Description Input C101, C102 Chip capacitor C103, C104 Chip capacitor, 4.71 μF C105 Chip capacitor, 0.6 pF C106 Chip capacitor, 2.2 pF C107 Chip capacitor, 8.2 pF C801, ...

Page 12

Confidential, Limited Internal Distribution Package Outline Specifications 4X R1.524 [R.060] 2X R1.626 [R.064] 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. ...

Page 13

Confidential, Limited Internal Distribution Package Outline Specifications 45° X 2.032 [45° X .080] 2X 30° +.381 4X R0.508 -.127 [ ] R.020 +.015 -.005 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME ...

Page 14

... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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