PTFB211503EL V1 R250 Infineon Technologies, PTFB211503EL V1 R250 Datasheet - Page 13

• Manufacturer Part Number: PTFB211503EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211503ELV1R25NT

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Package Outline Specifications
Data Sheet
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4X R0.508
1.575
[.062] (SPH)
[
R.020 +.015
[45° X .080]
45° X 2.032
-.005
+.381
-.127
Diagram Notes—unless otherwise specified:
1.016
]
[.040]
2X 30°
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = V
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
C L
V
(cont.)
Package H-34288-4/2
22.352±.200
[.880±.008]
23.114
2X 12.700
[.910]
22.860
[.500]
[.900]
L C
L C
13 of 14
D
G
C 66065- A 0003- C 743- 01- 0 027 H - 34288- 4_ 2 . d w g
V
DD
9.398
[.370]
.
S
2X 5.080
4.039 +.254
[
[.200]
2X 1.143
.159 +.010
[.045]
9.779
[.385]
-.127
-.005
[.192±.020]
4.889±.510
]
PTFB211503EL
PTFB211503FL
19.558±.510
[.770±.020]
Rev. 04, 2011-03-07