PTFB212503EL V1 Infineon Technologies, PTFB212503EL V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB212503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB212503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.85 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB212503ELV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-20
-25
-30
-35
-40
-45
-50
-55
-60
37
35
Third Order Intermodulation Distortion
39
2140 MHz
2170 MHz
2110 MHz
ƒ
1
41
= 2170 MHz, ƒ
V
Output Power, PEP (dBm)
40
V
Two-tone Drive-up
Output Power, PEP (dBm)
DD
DD
vs. Output Power
43
= 30 V, I
= 30 V, I
45
(cont.)
45
DQ
Efficiency
DQ
47
2
= 1.85 A,
= 2169 MHz
= 1.85 A,
49
IMD 3rd
50
51
53
55
55
45
40
35
30
25
20
15
10
5
0
4 of 14
-20
-30
-40
-50
-60
-70
20
19
18
17
16
15
35
37
Gain
39
Intermodulation Distortion
ƒ
ƒ
1
1
= 2170 MHz, ƒ
41
= 2170 MHz, ƒ
V
Output Power, PEP (dBm)
V
40
Output Power, PEP (dBm)
Two-tone Drive-up
DD
DD
= 30 V, I
43
= 30 V, I
3rd Order
5th
7th
45
45
DQ
DQ
2
47
2
= 1.85 A,
= 2169 MHz
= 1.85 A,
= 2169 MHz
PTFB212503EL
PTFB212503FL
49
Efficiency
50
Rev. 07, 2010-11-04
51
53
55
55
50
40
30
20
10
0