PTFB212503EL V1 Infineon Technologies, PTFB212503EL V1 Datasheet - Page 6

• Manufacturer Part Number: PTFB212503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB212503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.85 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB212503ELV1NP

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
See next page for reference circuit information
Data Sheet
MHz
2080
2110
2140
2170
2200
Z Source
2.42
2.31
2.21
2.12
2.04
R
Z Source W
G
–5.57
–5.36
–5.15
–4.96
–4.77
D
S
jX
Z Load
1.34
1.32
1.29
1.27
1.25
R
Z Load W
6 of 14
–4.23
–4.12
–4.01
–3.91
–3.81
jX
2080 MHz
Z Load
Z Source
PTFB212503EL
PTFB212503FL
Rev. 07, 2010-11-04
2200 MHz
Z
0
= 50 W