NE3511S02-T1C-A CEL, NE3511S02-T1C-A Datasheet - Page 6

• Manufacturer Part Number: NE3511S02-T1C-A
• Description: RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
• Manufacturer: CEL

Specifications of NE3511S02-T1C-A

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 65 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE DIMENSIONS
S02 (UNIT: mm)
6
2
(Side View)
(Top View)
1
3
0.65 TYP.
3.2±0.2
2.2±0.2
3.2±0.2
B
1.7
Data Sheet PG10642EJ01V0DS
PIN CONNECTIONS
4
1. Source
2. Drain
3. Source
4. Gate
4
(Bottom View)
1
3
2.2±0.2
2
NE3511S02