NE3511S02-T1C-A CEL, NE3511S02-T1C-A Datasheet - Page 7

• Manufacturer Part Number: NE3511S02-T1C-A
• Description: RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
• Manufacturer: CEL

Specifications of NE3511S02-T1C-A

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 65 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RECOMMENDED SOLDERING CONDITIONS
methods and conditions other than those recommended below, contact your nearby sales office.
Infrared Reflow
Partial Heating
Caution Do not use different soldering methods together (except for partial heating).
This product should be soldered and mounted under the following recommended conditions.
Soldering Method
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (terminal temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
Data Sheet PG10642EJ01V0DS
Soldering Conditions
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
Condition Symbol
NE3511S02
HS350
For soldering
IR260
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