NE960R275 CEL, NE960R275 Datasheet - Page 2

• Manufacturer Part Number: NE960R275
• Description: RF GaAs X KU Band MESFET
• Manufacturer: CEL

Specifications of NE960R275

• Gate-source Breakdown Voltage: - 7 V
• Continuous Drain Current: 350 mA
• Power Dissipation: 2.5 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE960R275
ABSOLUTE MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
SYMBOLS
T
V
V
T
I
I
P
I
GR
STG
GF
DS
GS
CH
D
t
-0.5
1.5
1.0
0.5
0.0
30
25
20
15
10
5
5
Drain to Source Voltage
Gate to Source Voltage
Total Power Dissipation
Drain Current
Gate Current (forward)
Gate Current (reverse)
Channel Temperature
Storage Temperature
GATE CURRENT vs. INPUT POWER
OUTPUT POWER AND EFFICIENCY
PARAMETERS
Input Power, P
Input Power, P
10
10
vs. INPUT POWER
f = 14.5 GHz (1 tone)
V
R
15
DS
G
15
f = 14.5 GHz (1 tone)
V
R
= 1 K
= 9 V, I
DS
G
IN
IN
= 1 K
= 9 V, I
(dBm)
(dBm)
DSQ
20
DSQ
20
= 90 mA
UNITS
mA
mA
mA
W
= 90 mA
V
V
C
C
1
25
25
(T
-65 to +175
RATINGS
60
45
30
15
A
0
-2.5
= 25 C)
(T
350
175
2.5
2.5
15
-7
A
= 25 C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
G
V
T
COMP
DS
CH
200
150
100
50
0
Drain to Source Voltage
Channel Temperature
Gain Compression
5
DRAIN CURRENT AND LINEAR GAIN
f = 14.5 GHz (1 tone)
V
R
PARAMETERS
DS
G
= 1 K
= 9 V, I
Input Power, P
10
vs. INPUT POWER
DSQ
= 90 mA
15
IN
dBcomp
UNITS
(dBm)
V
C
20
MIN TYP MAX
25
14
12
10
9
8
6
130
9
3