NE960R275 CEL, NE960R275 Datasheet

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NE960R275

Manufacturer Part Number
NE960R275
Description
RF GaAs X KU Band MESFET
Manufacturer
CEL
Datasheet
1.NE960R275.pdf (3 pages)

Specifications of NE960R275

Gate-source Breakdown Voltage
- 7 V
Continuous Drain Current
350 mA
Power Dissipation
2.5 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
The NE960R275 is a Power GaAs MESFET covering the 4
GHz to 18 GHz range and is designed for X and Ku Band
amplifiers and oscillator applications.
The device incorporates WSi (tungsten silicide) gate and sili-
con dioxide glassivation. NEC's strigent quality assurance and
test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
Note:
1. V
FEATURES
• HIGH OUTPUT POWER: 25.0 dBm TYP @ P
• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz
• HIGH EFFICIENCY: 35% TYP @ 14.5 GHz
• HIGH RELIABILITY
• CLASS A OPERATION
DS
= 9 V, I
SYMBOLS
BV
P
DSQ
P
I
R
DSS
G
Vp
OUT
ADD
1dB
TH
GD
L
= 90 mA, f = 14.5 GHz.
0.2W X, Ku-BAND POWER GaAs MESFET
Linear Gain
Output Power (1 dB)
Power Out at Fixed Input Power
Power Added Efficiency
Thermal Resistance
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down Voltage
PACKAGE OUTLINE
CHARACTERISTICS
PART NUMBER
1
(T
dB
A
= 25 C)
UNITS
dBm
dBm
C/W
dB
%
A
V
V
OUTLINE DIMENSIONS
2 PLACES
1.8
22.0
0.09
MIN
-2.5
8.0
15
+0.15
-0.05
California Eastern Laboratories
0.1
NE960R275
+0.06
SOURCE
-0.02
TYP
10.0
25.0
24.0
-1.8
DRAIN
0.2
75
35
PACKAGE OUTLINE 75
GATE
9.8 MAX
2.7 TYP
7.0
MAX
0.35
-0.5
60
0.5
0.1
NE960R275
(Units in mm)
f = 14.5 GHz, Rg = 1K
V
V
TEST CONDITIONS
DS
DS
0.9 MAX
I
Channel to Case
DSQ
= 2.5 V, I
P
= 1.5 V, V
V
P
2.3
IN
I
DS
OUT
GD
1.13
= 90 mA
= 15 dBm
= 9 V
2.7
3.0 MIN BOTH
= 1 mA
= P
2.3
LEADS
DS
1dB 1
GS
= 1 mA
= 0 V
1

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NE960R275 Summary of contents

Page 1

... HIGH EFFICIENCY: 35% TYP @ 14.5 GHz • HIGH RELIABILITY • CLASS A OPERATION DESCRIPTION The NE960R275 is a Power GaAs MESFET covering the 4 GHz to 18 GHz range and is designed for X and Ku Band amplifiers and oscillator applications. The device incorporates WSi (tungsten silicide) gate and sili- con dioxide glassivation ...

Page 2

... NE960R275 ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS P Total Power Dissipation t I Drain Current D I Gate Current (forward Gate Current (reverse Channel Temperature CH T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage ...

Page 3

... NE960R275 TYPICAL SCATTERING PARAMETERS NE960R275 DSQ FREQUENCY S 11 GHz MAG ANG 2.0 0.89 -113 3.0 0.86 -129 4.0 0.85 -138 5.0 0.84 -140 6.0 0.81 -144 7.0 0.83 -152 8.0 0.81 -163 9.0 0.75 -176 10.0 0.71 166 11.0 0.62 140 12 ...

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