NE02133-T1B-R3 CEL, NE02133-T1B-R3 Datasheet

NE02133-T1B-R3

Manufacturer Part Number

NE02133-T1B-R3

Description

RF Bipolar Small Signal NPN High Frequency

Manufacturer

CEL

Datasheet

1.NE02135.pdf (12 pages)

Specifications of NE02133-T1B-R3

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.07 A

Package / Case

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,

DESCRIPTION

NEC's NE021 series of NPN silicon transistors provides eco-

nomical solutions to wide ranges of amplifier and oscillator

problems. Low noise and high current capability provide low

intermodulation distortion. The NE021 series is available as a

chip or in several package styles. The series uses the NEC gold,

platinum, titanium, and platinum-silicide metallization system to

provide the utmost in reliability. NE02107 is available in both

common-base and common-emitter configurations and has

been qualified for high-reliability space applications.

NE02135

TYPICAL NOISE PARAMETERS

PLEASE NOTE:

The following part numbers from this datasheet are nonpromotive:

The following part numbers from this datasheet are discontinued:

FEATURES

PLEASE NOTE:

Please call sales office for details.

FREQ.

(MHz)

2 GHz Gain Compression

1000

1500

2000

2500

3000

3500

1000

1500

2000

2500

3000

3500

500

= 10 V, I

(dB)

= 5 mA

= 20 mA

1.2

1.5

2.0

2.4

2.6

3.6

3.7

1.8

1.9

2.4

2.9

3.2

3.9

4.3

OPT

NE02100

NE02133

NE02139

NE02107

NE02135

18.60

13.82

11.83

21.32

16.15

13.50

11.02

(dB)

9.36

7.82

7.51

6.31

9.12

8.10

6.48

MAG

.36

.31

.50

.44

.52

.68

.71

.16

.33

.46

.53

.57

.62

.67

Γ Γ Γ Γ Γ

OPT

FREQUENCY TRANSISTOR

ANG

-175

-161

-141

-139

-179

-167

-154

-139

-134

124

165

149

169

NEC's NPN SILICON HIGH

Rn/50

= 25°C)

.14

.12

.05

.06

.10

.14

.21

.15

.13

.09

.08

.14

.27

.42

NE02139

TYPICAL NOISE PARAMETERS

FREQ.

00 (CHIP)

33 (SOT 23 STYLE)

(MHz)

1000

1500

2000

500

= 10 V, I

California Eastern Laboratories

(dB)

= 20 mA

1.8

2.1

2.3

2.6

OPT

(dB)

17.5

12.5

9.5

7.5

MAG

0.11

0.27

0.36

0.43

07/07B

35 (MICRO-X)

39 (SOT 143 STYLE)

NE021

SERIES

Γ Γ Γ Γ Γ

OPT

ANG

-156

-147

156

168

Rn/50

= 25°C)

.20

.16

.18

.21

Related parts for NE02133-T1B-R3

NE02133-T1B-R3 Summary of contents

Page 1

... PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers from this datasheet are nonpromotive: NE02100 NE02133 NE02139 The following part numbers from this datasheet are discontinued: NE02107 NE02135 Please call sales office for details. NEC's NPN SILICON HIGH ...

Page 2

... MIN TYP MAX MIN 4.5 18.5 13 5.5 6.5 5.5 1.5 2.7 4.5 1.0 1 250 20 0.6 1.0 70 580 700 350 NE02133 NE02135 2SC2351 2SC2149 33 35 MIN TYP MAX MIN TYP MAX MIN 4.5 4 5.7 1.5 1.5 3 2.7 4.0 1.0 1.0 1 ...

Page 3

... Maximum T for the NE02133 and NE02139 J is +150°C. 4. Maximum storage temperature for the NE02135 is -65 to +150°C. Maximum storage temperature for the NE02133 and NE02139 is -55 to 150°C. TYPICAL PERFORMANCE CURVES NE02133 DC POWER DERATING CURVES 400 1. Mounted On Al (32x21x10mm) And Encapsulated ...

Page 4

... NE02133 GAIN vs. FREQUENCY 20mA MAG 8 0 0.2 0.3 0.5 0.7 1.0 0.1 Frequency, f (GHz) NOISE FIGURE vs. COLLECTOR CURRENT GHz 0.5 GHz NE02133 1 NE02107, NE02135 Collector Current, I (mA) C GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 f T 300 200 100 ...

Page 5

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 S 11 j10 5 GHz 100 GHz -j10 S 11 0.1 GHz -j25 -j50 NE02100 FREQUENCY ...

Page 6

TYPICAL COMMON BASE SCATTERING PARAMETERS j50 j25 GHz j10 S 11 0.1 GHz 100 -j10 -j25 S 22 -j50 4 GHz NE02107B FREQUENCY ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 100 GHz -j10 S 11 0.1 GHz -j25 -j50 NE02107 FREQUENCY ...

Page 8

... NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 GHz 100 GHz -j10 S 11 0.1 GHz -j25 -j50 NE02133 FREQUENCY S 11 (MHz) MAG ANG 100 .80 -37 200 .63 -63 500 .37 -114 1000 .27 -158 1500 .27 172 2000 .29 151 100 .66 -48 200 .46 -78 500 ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 100 GHz -j10 S 11 0.1 GHz -j25 -j50 NE02135 FREQUENCY ...

Page 10

NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 100 GHz -j10 -j25 -j50 NE02139 FREQUENCY S 11 ...

Page 11

OUTLINE DIMENSIONS (Units in mm) NE02100 (CHIP) 0.35±0.01 0.30 0.29 0.23 0.052 BASE EMITTER 0.07 PACKAGE OUTLINE 33 +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 0.35±0.01 ...

Page 12

... ORDERING INFORMATION PART NUMBER QUANTITY NE02100 100 NE02107/NE02107B 1 NE02133-T1B 3000 NE02135 1 NE02139-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

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