BLF6G38-10G /T3 NXP Semiconductors, BLF6G38-10G /T3 Datasheet - Page 13

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BLF6G38-10G /T3

Manufacturer Part Number
BLF6G38-10G /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38-10G /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.1 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
0.8(Min)S
Drain Source Resistance (max)
1256@6.15Vmohm
Reverse Capacitance (typ)
3.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
20%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-10G,118
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Document ID
BLF6G38-10_BLF6G38-10G_1
Revision history
Table 11.
Acronym
CCDF
CW
EVM
FCH
FFT
IBW
IS-95
LDMOS
NA
N-CDMA
PAR
PUSC
RF
SMD
VSWR
WCS
WiMAX
Abbreviations
Release date
20090203
Description
Complementary Cumulative Distribution Function
Continuous Wave
Error Vector Magnitude
Frame control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
North American
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Data sheet status
Product data sheet
WiMAX power LDMOS transistor
Change notice
-
© NXP B.V. 2009. All rights reserved.
Supersedes
-
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