BLF6G38-10G /T3 NXP Semiconductors, BLF6G38-10G /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF6G38-10G /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10G /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10G,118

NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 1.
Fig 3.
EVM
(%)
12
8
4
0
10
V
EVM as a function of load power;
typical values
V
Adjacent channel power ratio as a function of average load power; typical values
DS
DS
1
= 28 V; I
= 28 V; I
7.2.2 Graphs
Dq
Dq
= 130 mA; f = 3500 MHz.
= 130 mA; f = 3500 MHz.
1
ACPR
(dBc)
P
20
30
40
50
60
L
10
(W)
1
001aaj362
Rev. 01 — 3 February 2009
10
BLF6G38-10; BLF6G38-10G
1
Fig 2.
(dB)
G
P
L(AV)
p
20
18
16
14
12
10
10
ACPR
ACPR
ACPR
V
Power gain and drain efficiency as function of
average load power; typical values
(W)
1
DS
001aaj364
= 28 V; I
10M
20M
30M
10
G
D
p
Dq
WiMAX power LDMOS transistor
= 130 mA; f = 3500 MHz.
1
P
L(AV)
© NXP B.V. 2009. All rights reserved.
(W)
001aaj363
10
50
40
30
20
10
0
(%)
D
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