BLT70 T/R NXP Semiconductors, BLT70 T/R Datasheet - Page 4

• Manufacturer Part Number: BLT70 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT70 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT70,115

Philips Semiconductors
CHARACTERISTICS
T
1996 Feb 06
handbook, halfpage
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
V
h FE
CE
Fig.3
100
= 4.8 V; T
80
60
40
20
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
DC current gain as a function of collector
current; typical values.
j
= 25 C.
100
PARAMETER
200
I C (mA)
MGD198
300
open emitter; I
open base; I
open collector; I
V
V
V
V
CE
CE
CB
CE
= 7 V; V
= 4.8 V; I
= 4.8 V; I
= 4.8 V; I
4
handbook, halfpage
CONDITIONS
C
BE
C
E
C
I
E
= 5 mA
C
= i
(pF)
= i
= 0
= 100 mA
= 0; f = 1 MHz
C c
E
= 0.5 mA
Fig.4
e
= 0.2 mA
e
4
3
2
1
0
= 0; f = 1 MHz; T
= 0; f = 1 MHz
0
Collector capacitance as a function of
collector-base voltage; typical values.
4
j
= 25 C.
16
8
2.5
25
8
MIN.
Product specification
12
0.1
3.5
2.5
MAX.
V CB (V)
MGD199
BLT70
16
V
V
V
mA
pF
pF
UNIT