BLT70 T/R NXP Semiconductors, BLT70 T/R Datasheet - Page 9

• Manufacturer Part Number: BLT70 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT70 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT70,115

Philips Semiconductors
1996 Feb 06
handbook, halfpage
handbook, halfpage
UHF power transistor
V
V
Fig.9
CE
CE
(dB)
( )
G p
Z i
= 4.8 V; I
= 4.8 V; I
12
20
16
12
8
4
0
8
4
0
800
800
Fig.11 Power gain as a function of
Input impedance as a function of frequency
(series components); typical values.
CQ
CQ
= 0.01 mA; P
= 0.01 mA; P
frequency; typical values.
850
850
L
L
= 0.6 W; T
= 0.6 W; T
900
900
r i
x i
s
s
950
950
60 C.
60 C.
f (MHz)
f (MHz)
MGD202
MGD204
1000
1000
9
handbook, halfpage
handbook, halfpage
V
Fig.10 Load impedance as a function of frequency
CE
( )
Z L
= 4.8 V; I
40
30
20
10
10
20
Fig.12 Definition of transistor impedance.
0
800
(series components); typical values.
CQ
Z i
= 0.01 mA; P
850
R L
X L
L
= 0.6 W; T
900
Z L
s
MBA451
Product specification
950
60 C.
f (MHz)
MGD203
BLT70
1000