BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 6

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
8. Test information
BLF3G21-6_1
Product data sheet
Fig 9.
output
50
V
Class-AB test circuit for 2 GHz
GG
L3
C1
C2
C17
Rev. 01 — 25 June 2008
L4
C3
R2
R1
L5
C4
L6
L7
C5
C20
C6
L8
C21
C7
C8
L9
C9
L2
L1
UHF power LDMOS transistor
L10
C10
C16
C12
C11
BLF3G21-6
C18
C13
L11
© NXP B.V. 2008. All rights reserved.
C19
C14
001aai232
output
50
V
DD
C15
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