BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 8

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
Table 9.
[1]
[2]
[3]
BLF3G21-6_1
Product data sheet
Component Description
C1, C2, C11
C4, C10
C6
C7
C8
C9
C12
C13
C14
C15
C16
C17, C18
C19
C20
C21
L1, L2
L3
L3
L4
L5
L6
L7, L8
L9
L10, L11
R1
R2
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Rogers 5880 dielectric (
List of components (see
multilayer ceramic chip capacitor
Tekelec variable capacitor; type 37281
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Tekelec variable capacitor; type 37281
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
tantalum SMD capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
3 turns enamelled copper wire
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
SMD resistor
SMD resistor
Figure 9
and
Rev. 01 — 25 June 2008
Figure
10)
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
[1]
[1]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
Value
6.8 pF
0.4 pF to 2.5 pF
2.7 pF
2.0 pF
0.2 nF
0.6 pF to 4.5 pF
10 pF
51 pF
120 pF
100 nF
100 F; 63 V
10 F; 35 V
1 nF
22 pF
560 pF
D = 2 mm;
d = 0.8 mm;
length = 3 mm
50
34.3
50
34.3
23.6
5.6
3.5
31.9
470
1 k
UHF power LDMOS transistor
Remarks
(L
(L
(L
(L
(L
(L
(L
(L
r
W) 3.5 mm
W) 1.0 mm
W) 11.0 mm
W) 8.0 mm
W) 1.5 mm
W) 14.4 mm
W) 3.5 mm
W) 12.0 mm
= 2.2); thickness = 0.51 mm.
BLF3G21-6
© NXP B.V. 2008. All rights reserved.
1.5 mm
1.5 mm
3.0 mm
1.0 mm
1.5 mm
0.8 mm
3.0 mm
1.9 mm
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