BF556B T/R NXP Semiconductors, BF556B T/R Datasheet - Page 2

RF JFET TAPE7 FET-RFSS

BF556B T/R

Manufacturer Part Number
BF556B T/R
Description
RF JFET TAPE7 FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF556B T/R

Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
- 30 V
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF556B,215
Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 13393
Product data sheet
Table 2:
Table 3:
Table 4:
[1]
Pin
1
2
3
Type number
BF556A
BF556B
BF556C
Type number
BF556A
BF556B
BF556C
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Pinning
Ordering information
Marking
Description
source (s)
drain (d)
gate (g)
Package
Name
-
Rev. 03 — 5 August 2004
Description
plastic surface mounted package; 3 leads
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Marking code
24*
25*
26*
Simplified outline
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
3
SOT23
2
Symbol
g
sym054
Version
SOT23
d
s
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