BF556B T/R NXP Semiconductors, BF556B T/R Datasheet - Page 4

• Manufacturer Part Number: BF556B T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF556B T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF556B,215

Philips Semiconductors
7. Static characteristics
Table 7:
T
9397 750 13393
Product data sheet
Symbol
V
V
I
I
DSS
GSS
j
y
y
(BR)GSS
GSoff
= 25 C unless otherwise specified.
fs
os
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
drain current
gate-source leakage current
forward transfer admittance
common source output
admittance
Static characteristics
Conditions
I
I
V
V
V
V
G
D
GS
GS
GS
GS
BF556A
BF556B
BF556C
= 200 A; V
= 1 A; V
Rev. 03 — 5 August 2004
= 0 V; V
= 20 V; V
= 0 V; V
= 0 V; V
DS
DS
DS
DS
DS
DS
= 15 V
= 15 V
= 15 V
BF556A; BF556B; BF556C
= 0 V
= 15 V
= 0 V
N-channel silicon junction field-effect transistors
Min
3
6
11
-
4.5
-
30
0.5
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
40
0.5
Max
-
7
13
18
-
-
7.5
5000
Unit
V
V
mA
mA
mA
pA
mS
S
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