BLF6G22LS-130 NXP Semiconductors, BLF6G22LS-130 Datasheet
BLF6G22LS-130
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BLF6G22LS-130 Summary of contents
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... BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... LDMOST ceramic package; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - 0 ...
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... Symbol Parameter P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1100 mA BLF6G22LS-130_1 Product data sheet Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage ...
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... NXP Semiconductors 7.2 One-tone CW Fig 1. BLF6G22LS-130_1 Product data sheet (dB 1100 mA 2170 MHz One-tone CW power gain and drain efficiency as functions of load power; typical values Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor 001aai093 (%) 120 160 P (W) L © NXP B.V. 2008. All rights reserved ...
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... 2169.95 MHz 2170.05 MHz 001aai095 IMD3 (dBc) IMD3 IMD5 IMD7 200 250 P (W) L(PEP) = 2169.95 MHz; 1 (1) I (2) I (3) I (4) I (5) I Fig 4. Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor 001aai094 60 D (%) 120 160 P ( (1) (2) (5) (3) ( 100 150 200 2169.95 MHz 2170 ...
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... BLF6G22LS-130_1 Product data sheet 001aai098 40 ACPR, D IMD3 (%) D (dBc ( 2157.5 MHz; 1 Fig 6. Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor IMD3 ACPR 1100 mA 2169.95 MHz 2170.05 MHz. 2 2-carrier W-CDMA adjacent channel leakage ratio and IMD3 as functions of average load power; typical values © NXP B.V. 2008. All rights reserved. ...
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... Figure 7) Value 3.6 pF 0.3 pF 1.2 pF 4.7 pF 100 220 nF 1 220 4.7 2.7 Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor C17 C13 C14 C10 C11 C12 OUTPUT PCB V2 001aai108 = 3.48 and thickness = 0.762 mm. r Remarks [1] [1] [1] TDK C4532X7R1E475M t020U or equivalent ...
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... REFERENCES JEDEC JEITA Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20080523 Product data sheet Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 23 May 2008 BLF6G22LS-130 Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22LS-130_1 All rights reserved. Date of release: 23 May 2008 ...